A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Backed by peer-reviewed studies and more than 16 years of research, the device applies scent-based stimulation to enhance cognitive performance and memory function In a 2023 randomized controlled ...