IEEE

$1.5\mu \mathrm{m}$ Dual Conversion Gain, Backside Illuminated Image Sensor Using Stacked Pixel Level Connections with 13ke-Full-Well Capacitance and 0.8e-Noise

Abstract: A 1.5μm pixel size, 8 mega pixel density, dual conversion gain (DCG), back side illuminated CMOS image sensor (CIS) is described having a linear full-well capacity (FWC) of 13ke- and total ...
IEEE

6.10 A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation

Abstract: CMOS image sensors (CISs) in high-end mobile devices require wide dynamic range and superior image quality under extremely low light conditions [1]. To implement high-resolution sensors that ...