The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva™ pure radical ...

GaN-based electronics are known for their ability to reduce energy losses and shrink the size of power converters and related ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva pure radical treatment smoothens GAA silicon nanosheets with atomic-level ...

In one instance, to further enhance output voltage swing and linearity, the authors propose a novel “breakdown-voltage (BV) ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

For decades, optical inspection has been the primary method for process control in fabs. However, the move to multi-level ...

Infineon has published the 2026 edition of its annual GaN Insights, looking at the growing adoption of GaN power solutions. “GaN has become a market reality that has gained traction across various ...

European researchers and companies gain access to the world's most advanced lithography system. Imec is inaugurating a ...

The study introduces an atomic single electron transistor that maps the electrostatic potential in a moiré unit cell, ...