The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

Applied Materials introduced three new chipmaking systems that boost the energy-efficient performance of leading-edge logic chips. The technologies supercharge AI compute through atomic-scale ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

GaN-based electronics are known for their ability to reduce energy losses and shrink the size of power converters and related ...

New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva pure radical treatment smoothens GAA silicon nanosheets with atomic-level ...

In one instance, to further enhance output voltage swing and linearity, the authors propose a novel “breakdown-voltage (BV) ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

For decades, optical inspection has been the primary method for process control in fabs. However, the move to multi-level ...

Efficient Power Conversion (EPC) has entered a licensing agreement with Renesas Electronics for EPC’s low-voltage enhancement ...

Neurophos is developing a massive optical systolic array clocked at 56GHz good for 470 petaFLOPS of FP4 compute As Moore's Law slows to a crawl and the amount of energy required to deliver ...

Intel’s 18A is now shipping with gate-all-around and backside power delivery, marking a transition to commercial execution.