A cartridge-based console project that blends Arduino fundamentals, retro gaming nostalgia, and modern maker tools.
SemiQ Inc. expanded its family of 1,200-V Gen3 silicon-carbide (SiC) MOSFETs with five SOT-227 modules that offer on-resistance (R DS(on)) values of 7.4, 14.5, and 34 mΩ. The GCMS modules, which ...
Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide ...
Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors
Advanced bare dies for diverse embedding needs, enabling lower power consumption in power electronics equipment Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21 ...
Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Abstract: Paralleling multiple MOSFETs is a common prac-tice to achieve high current carrying capability. This paper proposes a low-parasitic inductance parallel module design to enhance current ...
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