Abstract: A novel gate-all-around (GAA) nanosheet field-effect transistor (NSFET) with bottom p-i-n isolation is proposed for the first time, which can effectively suppress the parasitic subchannel ...
Abstract: Amorphous indium gallium zinc oxide (a-IGZO) thin films have been investigated to meet the high-resolution demands of augmented reality (AR) and virtual reality (VR) applications. In this ...
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