Abstract: In this paper, the carrier trapping behavior and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) under different bias conditions are studied based on the ...
Practice projectile motion with fully solved physics problem examples. This video walks through step-by-step solutions to help you understand equations, motion components, and problem-solving ...
Abstract: Under the high-frequency and high-dv/dt pulse excitation of SiC inverter, hairpin winding (HW) is susceptible to nonuniform voltage stress, which will threaten its insulation reliability.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results