Abstract: The step-by-step scheme is proposed to co-design device and system architectural and operational parameters for the summing network with the floating gate-based stochastic neurons. In the ...
Abstract: Gallium Nitride (GaN)-based Gate Stack (GS) Gate-All-Around Field Effect Transistors (GAA FETs) are promising candidates for next-generation energy-efficient electronics due to their ...
Single-channel isolated gate drivers in the 1ED301xMC121 series from Infineon are pin-compatible replacements for optocoupler ...
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