Abstract: This paper proposes a MOSFET-only error amplifier(EA) with clamp function, which reduces the power consumption to $71.7 \mu \mathrm{~A}$. Moreover, the ...
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
Abstract: In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and ...
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