EDN

Powering AI at scale: How HVDC and GaN are transforming hyperscale data centers

The surge in power requirements for data centers is driving demand for denser, more efficient power conversion from the grid to the core.
EDN

GaN transistor cuts losses and heat

EPC’s first Gen 7 eGaN power transistor, the 40-V EPC2366, delivers up to 3× better performance than equivalent silicon ...
IEEE

An ANN-Based GaN HEMT Large-Signal Model With High Near-Threshold Accuracy and Its Application in Class-AB MMIC PA Design

Abstract: Artificial neural network-based gallium nitride high-electron-mobility transistor (ANN-based GaN HEMT) models have garnered significant attention due to their high accuracy, low development ...
IEEE

Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin p-GaN Design

Abstract: Dynamic resistance degradation, which is severely affected by the trapping effect, is a critical challenge for lateral AlGaN/GaN power devices, especially when operating in high-voltage and ...
Seeking Alpha

Navitas 2.0: GaN And SiC Powerhouse Pivoting Into The AI Data Center Boom

I give Navitas Semiconductor a Strong Buy rating for its strategic pivot to high-power, high-margin markets like AI data centers and industrial electrification. NVTS’s unique GaN and SiC technology ...