Sandisk Corporation has emerged as a structural winner in the AI-driven memory supercycle, benefitting not only from favorable near-term NAND pricing tailwinds, but also accelerating bit demand from ...

Sandisk (SNDK) could double the price of its high-capacity 3D NAND memory devices for enterprise-grade solid-state drives this quarter, anticipating strong demand for server-class storage in the ...

Moving into 2026, industry experts anticipate that MLC NAND flash capacity will decrease by 41.7%, thanks to Samsung ending its own MLC shipments in June of this year and other manufacturers including ...

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...

Small to medium-sized businesses want to use artificial intelligence (AI) to streamline workflows, reduce manual tasks and improve customer experiences. But many IT teams are stuck on how to implement ...

Memory manufacturers are swiftly following SanDisk's announcement of a 10% price increase for NAND products, signaling a broader industry move toward higher pricing amid expected supply shortages ...

WASHINGTON, Sept 4 (Reuters) - U.S. President Donald Trump signed an executive order on Thursday implementing the U.S.-Japan trade agreement, the White House said. "Under the Agreement, the United ...

SK hynix says it has begun mass production of its 321-layer 2-terabit (Tb) quad-level cell (QLC) NAND flash memory, which marks the first implementation of QLC NAND to employ more than 300 layers.

3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other. A major challenge in producing multilayered 3D ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 Several NAND flash manufacturers were discussing higher ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...