In MCU-based projects, this design uses a single push button to switch on and switch off 5-V and 15-V supplies in sequence.

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Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...

Abstract: The accurate monitoring of the temperature of silicon-carbide (SiC) MOSFETs during operation in power electronic converters is crucial. The use of temperature-sensitive electrical parameters ...