How an innovative wound patch provides on-skin monitoring of critical healing factors. How a unique polymerization material ...

An optimized, basic op amp offers precise sensor-output performance while negating temperature-induced drift and errors.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...

SUNNYVALE, Calif. - Alpha and Omega Semiconductor Limited (NASDAQ:AOSL) announced on Monday the launch of its αMOS E2 600V Super Junction MOSFET platform, with the AOTL037V60DE2 as the first product ...

Remote sense provides a straightforward way to correct them by letting the supply monitor the voltage at the load itself and ...

Newcastle United and Nottingham Forest are definitely at risk as we rank the non-Big Six stars most likely to secure an upwards transfer to a giant in 2026. The 2025 summer transfer window ...

Part 2 of this series discusses recent innovations and product launches in 2025 from leading SiC device manufacturers, providing an up-to-date perspective on state-of-the-art SiC. The SiC MOSFET ...

Turning off your smartphone is a great way to fix malfunctioning apps or apply setting changes. While you may think there is only one way to turn off your Android phone or iPhone, there are multiple ...

Learn the benefits and risks of options and how to start trading options Lucas Downey is the co-founder of MoneyFlows, and an Investopedia Academy instructor. Samantha (Sam) Silberstein, CFP®, CSLP®, ...

Relative dielectric constant ε Pure number 11.8 9.7/10.2 SiC achieves lower on-resistance than silicon because its higher breakdown electric field enables a much thinner, more heavily doped drift ...

Abstract: The surface-level gate-to-source damage mechanism in silicon carbide (SiC) power metal– oxide–semiconductor field-effect transistors (MOSFETs) is investigated under heavy-ion irradiation at ...