New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva™ pure radical ...
An efficient neural screening approach rapidly identifies circuit modules governing distinct behavioral transitions in ...
The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.
In one instance, to further enhance output voltage swing and linearity, the authors propose a novel “breakdown-voltage (BV) ...
A new technical paper titled “Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes” was published by researchers at Samsung and Seoul National University. Find the ...
Abstract: With power modulation circuits increasingly deployed from terrestrial and marine environments to space, Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) devices, which serve as key ...
ABSTRACT: This paper presents the performance evaluation of a single-phase five-level transistor-clamped H-bridge (TCHB) inverter, which is a modified circuit based on H-bridge inverter topology ...
ABSTRACT: This paper presents the performance evaluation of a single-phase five-level transistor-clamped H-bridge (TCHB) inverter, which is a modified circuit based on H-bridge inverter topology ...
Explains the principles of transistor switching circuits, highlighting their role in electronic computers. It contrasts transistors with vacuum tubes, emphasizing that transistors function as ...
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