Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good ...

Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle.

Navitas Semiconductor has introduced its fifth-generation GeneSiC silicon carbide (SiC) platform, unveiling new high‑voltage MOSFET technology designed to boost efficiency and reliability in demanding ...

AI chip for SDVs; hypercar; automotive edge chip; Waymo's new GenAI model; neuromorphic detects motion 4X faster; sodium-ion battery; Ferrari-all electric; carmakers' recalibrations on EVs; batteries ...

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...

Single-channel isolated gate drivers in the 1ED301xMC121 series from Infineon are pin-compatible replacements for optocoupler ...

With the proliferation of generative AI (GenAI) models, data centers are under pressure to deliver unprecedented ...

The 5 th generation MOSFET platform features Navitas’ most compact TAP architecture yet, combining the ruggedness of a planar gate with best-in-class performance figures of merit enabled by a trench ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

As of Wednesday, February 11, Diodes Incorporated’s DIOD share price has surged by 26.95%, which has investors questioning if this is right time to sell.

An advanced gate design could reshape EV and data center power systems.