Abstract: Accurate capacitance measurement is critical for the development of metal–insulator–metal (MIM) capacitors for semiconductor devices. In this study, we compare the frequency-dependent ...
Abstract: Accurate modeling of nonlinear capacitance is significant for physics-based compact modeling of GaN high-electric-mobility transistor (HEMT). For conventional methods, physical modeling of ...
IET LABS. LCR Primer – 1st Edition. Disponível em: https://www.ietlabs.com/pdf/application_notes/030122%20IET%20LCR%20PRIMER%201st%20Edition.pdf. Acesso em: 9 mar ...
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