Abstract: An accurate physics-based capacitance model is developed covering full-region operations of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances are ...
Abstract: A novel method for determining the parasitic capacitance of power MOSFETs is proposed. Unlike conventional methods that rely on small-signal measurements under specific bias conditions, the ...
As you will probably already know if you are engaged in electronics design at some level, a capacitor is a passive device ...
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