Abstract: This article investigates the single event effects (SEEs) in SiC MOSFETs integrated with a junction barrier diode [MOSFET integrated with JBS structure (JMOS)]. During irradiation ...
Organisers: The event is co-hosted by UNEP, WRI India, and NITI Aayog (under a GEF-funded project implemented with UNEP) India’s electric mobility transition is moving fast—new vehicles, new ...
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Patch AM: Opening reception surface and structure: Contemporary ceramics on the edge of form and 11 more events
Good morning to you Cleveland! Catch up on our news and events right here. Keep reading to stay in the know. ☕️️ Coming up on the calendar: Opening Reception Surface and Structure: Contemporary ...
Abstract: This study designed a type of silicon carbide (SiC) split-gate MOSFETs (SG-MOSFETs) to evaluate the effect of SG structure on single-event gate oxide damage under heavy-ion irradiation.
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