Abstract: This paper introduces the smallest dynamic random access memory (DRAM) cell, which was implemented using a new transistor structure, the dual work function - buried channel array transistor ...
Abstract: Following the pivotal success of 3-D NAND technology, which revolutionized flash memory, DRAM technology could similarly advance by adopting vertical stacking of memory cells, employing gate ...
Note: Totals might not equal 100 because of rounding. Source: Section survey of 5,000 white-collar workers from companies with 1,000 or more people in the U.S., U.K. and Canada conducted Sept. 26-Nov.
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