In this paper, a new 1700V SiC trench JFET with integrated SBD is proposed and studied by TCAD simulation. Compared with the conventional SiC JFET structure, the gate on one side of the proposed SiC ...
Abstract: The silicon (Si) fin-field-effect-transistor (FinFET) technology revolutionized the semiconductor industry by enabling scaling down to the advanced 4-nm node. Even FinFET has limitations, ...
Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good news is that a well-designed reverse polarity protection using MOSFET ...
This Pittsburgh seafood restaurant is turning heads in 2026 with fresh dishes, standout flavors, and the kind of buzz locals ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results