Abstract: The parasitic inductance and dynamic current sharing performances of multichip silicon carbide power module packaging limit the device's performance. Moreover, high electrical properties ...
700% higher concurrency 50% memory savings Startup is 10 times faster. Packing 90% smaller; It also supports java8 ~ java25, native runtime.
Abstract: This brief presents a novel Ku-band front-end module (FEM) powered by 3.3 V supply voltage in 65-nm bulk CMOS technology with a focus on reliability. 3-stack structure is adopted in the ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results