Abstract: This paper presents a new design of a 2 to 4 decoder constructed using 3-transistor NAND gates, contrasting it with the conventional 4 transistor NAND gate-based technique. The primary aim ...
Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...
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