Abstract: In this work, we demonstrate an STT-MRAM device with double reference layer that shows extremely low critical switching current density. A synthetic antiferromagnetic (SAF) layer [Co/Pt]n/Ru ...
Abstract: Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier. Here ...
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