This study explores gate reliability in p-GaN high electron mobility transistors (HEMTs) using different gate stack engineering (GSE) techniques. It analyses normally-off HEMTs with p-GaN gates, ...
Abstract: The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface is crucial for tuning the characteristics of p-GAN/AlGaN/GaN HEMT devices. However, the mobility of the 2DEG can be ...
My top favorite algorithm is a "simple" one. I learned it in college; which went into exhausting details using fractions to show how much data it contains. I'll skip that part of the description.
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