Abstract: A novel gate-all-around (GAA) nanosheet field-effect transistor (NSFET) with bottom p-i-n isolation is proposed for the first time, which can effectively suppress the parasitic subchannel ...
Abstract: This letter presents a precision low-noise sensor readout system with a bipolar junction transistor (BJT)-input-based amplifier and a high-input-impedance delta–sigma analog-to-digital ...
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